MB85RC16VPNF-G-JNE1【PDF 1/20 页】IC FRAM 16KBIT 400KHZ 8SOP

FUJITSU SEMICONDUCTOR

DATA SHEET

DS501-00010-2v0-E

Memory FRAM

16 K (2 K × 8) Bit I 2 C

MB85RC16V

■ DESCRIPTION

The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×

8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

memory cells.

Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery.

The memory cells used in the MB85RC16V have at least 10 10 Read/Write operation endurance per bit, which

is a significant improvement over the number of read and write operations supported by other nonvolatile

memory products.

The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike

Flash memory and E 2 PROM. Therefore, the writing completion waiting sequence like a write busy state is

not required.

■ FEATURES

Bit configuration : 2,048 words × 8 bits

Operating power supply voltage : 3.0 V to 5.5 V

Operating frequency : 400 kHz (Max)

Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

Operating temperature range : ? 40 ° C to + 85 ° C

Data retention : 10 years ( + 85 ° C)

Read/Write endurance : 10 10 times

Package : Plastic / SOP, 8-pin (FPT-8P-M02)

Low power consumption : Operating current 80 μ A (Max: @400 kHz), Standby current 5 μ A (Typ)

2011.10

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